Hprobe and NY CREATES to co-develop next-generation MRAM testing capabilities

Hprobe, a developer of testing equipment for magnetic devices, announced a strategic collaboration with NY CREATES, a lab-to-fab bridge for advanced electronics, to advance testing capabilities for next-generation semiconductor memory technologies. This joint development project will focus on the co-development of advanced testing equipment at the 300mm wafer scale.

NY CREATES and Hprobe will work together to support new testing solutions for MRAM, RRAM and selector devices. The joint project will focus on initial testing of MRAM and RRAM wafers from NY CREATES using Hprobe’s equipment, including the full-scale implementation of Hprobe’s IBEX wafer-level magnetic tester. Development of breakthrough testing procedures and algorithms for MRAM, RRAM, and selector devices, will also seek to advance the state-of-the-art in semiconductor memory testing.