MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

Everspin reports its Q1 2022 financial results

Everspin Technologies announced its financial results for Q1 2022, with revenues of $14.3 million (up 39% from 2021) and a net income of $1.9 million (compared to a $0.5 million net loss in 2021).

Everspin Technologies chip photo

Everspin says its product backlog for the rest of 2022 is at an all-time high, as demand continues to outpace supply. The company continues to work with its foundry partners to increase production capacity, but it expects the supply chain constraints to tighten in H2 2022.

Read the full story Posted: May 12,2022

Everspin launches a new family of SPI interface MRAM products

Everspin Technologies launched a new family of SPI/QSPI/xSPI interface MRAM products. Everspin says that the new EMxxLX family offers the world's highest performance persistent memory with full read and write bandwidth of 400 Megabytes per second through the new JEDEC expanded Serial Peripheral Interface (xSPI) standard interface.

With densities ranging from 8Mbit up to 64Mbit, this family of products is targeted for use in industrial IoT and embedded systems applications. Everspin began sampling the new chips for customers, and the company expects to commence volume production in the second half of 2022.

Read the full story Posted: May 04,2022

Researchers demonstrate an ultra-fast and efficient laser-induced opto-MRAM device

Researchers from Eindhoven University of Technology (TU/e) and the Fert Beijing Institute of Beihang University have experimentally demonstrated a fully-functional picosecond opto-MRAM building block device, by integrating ultrafast photonics with spintronics.

The researchers used a femtosecond (fs) laser, which is the fastest stimuli commercially that enabled the device to be extremely fast - and also a thousand times more energy efficient compared to standard MRAM devices. The device is based on the femtosecond laser-induced all-optical switching (AOS) scheme in synthetic ferrimagnetic multilayers that was discovered by TU/e in 2017, integrating it with MRAM bit

Read the full story Posted: Apr 30,2022

ESEN adopts Avalanche's MRAM technology for flight safety computer products

MRAM developer Avalanche Technology announced that ESEN has designed Avalanche’s 16Mbit High Performance Serial P-SRAM devices into its high reliability flight safety computer products.

Avalanche pMTJ STT-MRAM P-SRAM Serial QSPI Evaluation Kit photo

Avalanche's 2nd-Gen P-SRAM evaluation kit

The MRAM memory will provide a highly reliable solution, and Avalanche says that its Gen-2 products were selected for their ease of use, instant write capability, practically unlimited endurance and data retention in harsh environmental conditions. Avalanche Technology says it is the only supplier of low voltage MRAM products at 16Mb density operating at 1.8V in a small form factor with a serial interface.

Read the full story Posted: Mar 20,2022

ISI introduces a new 3-Axis magnet option for its MRAM tester systems, targeting STT-MRAM and SOT-MRAM testing

Integral Solutions International (ISI) announced a new 3-Axis Magnet Option for wafer-level testing. Combined with ISI's WLA5000 Tester, the 3D magnetic fields produced by this system can be used for characterization of MRAM devices in addition to 2D/3D Magnetic Sensors.

ISI WLA5000 MRAM tester

ISI says that for MRAM applications, the 3D Magnetic fields produced by ISI’s 3-Axis Magnet Option delivers solutions for both STT-MRAM and SOT-MRAM applications.

Read the full story Posted: Mar 04,2022

ITRI and UCLA to co-develop VC-MRAM technologies

Taiwan-based Industrial Technology Research Institute (ITRI) announced an agreement with the University of California, Los Angeles (UCLA) to co-develop Voltage-Control MRAM (VC-MRAM) technologies.

UCLA-ITRI-VC-MRAM-prototype

ITRI says that VC-MRAM is a type of SOT-MRAM that offers improved performance - 50% higher writing speed and 75% less energy consumption. VC-MRAM is said to be ideal for AIoT and automotive industry applications. The partnership is expected to strengthen the link between both parties and accelerate the R&D and industrialization of new memory technologies.

Read the full story Posted: Mar 04,2022

Everspin reports its Q4 2021 financial results

Everspin Technologies announced its financial results for Q4 2021. Revenues in the quarter came in at $18.2 million (up from $14.8 million in Q3 2021,and $10 million in Q4 2020). During the quarter, the company recognized $3.95 million in the IP monetization deal it signed in Q3 2021. The company reports Q4 positive net income of $3.7 million. Cash and equivalents at the end of the quarter increased to $21.4 million (up from $14.6 million in the end of 2020).

Everspin Technologies chip photo

Everspin has seen excellent Toggle MRAM shipments and revenue, but the company's STT-MRAM was flat as its largest customer was also impacted by supply constraints (not related to Everspin). The company expects STT-MRAM revenue to remain flat for the new couple of quarters. It expects Q1 2022 revenues to be in the range of $13.4 million to $14.2 million.

Read the full story Posted: Mar 03,2022

NTU and TSMC researchers develop a new SOT-MRAM structure with high spin-orbital Hall conductivity

Researchers from National Taiwan University in collaboration with TSMC developed a new SOT-MRAM device structure, that features sizable orbital currents. This research promises a pathway for enhancing SOT-MRAM performance by harnessing both the conventional spin currents and the emergent orbital currents.

NTU TSMC PtCr Alloys SOT-MRAMThe new device is based on 3d light transition metals (such as V and Cr) that are incorporated into the classical spin Hall metal Pt. The Pt-Cr alloy enhances the charge-to-spin conversion efficiency which can realize high spin-orbital Hall conductivity, beyond the conventional spin Hall limit.

Read the full story Posted: Feb 27,2022

Researchers developed an ultra low power BiSb-based SOT MRAM device

Researchers from the Tokyo Institute of Technology developed an ultrahigh-efficiency SOT magnetization switching in fully sputtered BiSb–(Co/Pt) multilayers with large perpendicular magnetic anisotropy (PMA).

Scheme of ultra low power BiSb SOT-MRAM device (Tokyo IT)

The new device offers a large spin Hall angle and high electrical conductivity, thus satisfying all the three requirements for SOT-MRAM implementation. The researchers managed to achieve robust SOT magnetization at a low current density despite the large PMA field.

Read the full story Posted: Feb 23,2022