Patents - Page 4

IBM has received a new patent, titled - "New Magnetic tunnel junctions for MRAM devices".

Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy. An amorphous material may be disposed adjacent a bottom surface of a tunnel junction, within a free layer, or both. An MTJ memory cell with improved thermal stability and decreased Neel coupling is achieved.

NVE Corporation said that it has been notified by the U.S. Patent and Trademark Office (USPTO) of the expected grant today of a patent relating to Magnetoresistive Random Access Memory (MRAM). The patent, titled "Magnetoresistive Memory SOI Cell," is number 7,148,531 and is the grant of a patent under the application published by the USPTO as number 2005-0242382.
 
NVE's invention relates to MRAM incorporating silicon-on-insulator (SOI) materials. The invention could allow smaller MRAM cells and lower power consumption by reducing the electrical current required to write data to the memory cells.

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Philips has a new application for a patent: A passive MRAM that will "self destruct" when someone tries to open it.

When you try and physically open the device, magnets inside will destroy the data stored in the MRAM chip.

The Two-Axis Magnetic Field Sensor is patent number 7,054,114, and is the grant of a patent under the application published by the USPTO as number 2004-0137275. The invention is for a spintronic device that can detect the magnitude and orientation of magnetic fields. Applications for such devices might include Magnetoresitive Random Access Memory (MRAM), or military, industrial, and medical sensors.

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NVE Corporation said today that it has been notified by the U.S. Patent and Trademark Office of the expected grant of a patent relating to magnetothermal Magnetoresistive Random Access Memory (MRAM).

NVE has been notified that the patent, titled "Magnetic Memory Layers Thermal Pulse Transitions," will be issued today. The grant is in addition to patent number 6,963,098 titled "Thermally Operated Switch Control Memory Cell," which was granted in November 2005, as well as other NVE patents relating to MRAM and magnetothermal MRAM.

 NVE Corporation said today that it has been notified by the U.S. Patent and Trademark Office of the expected grant of a key patent for magnetothermal Magnetoresistive Random Access Memory (MRAM).

NVE has been notified that the patent, titled "Thermally Operated Switch Control Memory Cell," will be issued today. The patent is number 6,963,098 and is the grant of a patent under the application published by the U.S. Patent and Trademark Office as number 2005-0002267.

Micromem announced today that they have signed an agreement with the University of Toronto (UT) giving Micromem exclusive world wide rights to all MRAM technology developed at the University and funded on behalf of Micromem Technologies. This proprietary technology was initially discovered and developed under collaborative research projects led by Professor Harry Ruda of the University of Toronto and co-funded by Micromem Technologies and two divisions of the Ontario Center of Excellence which include the Materials Manufacturing division of Ontario (MMO), and the Communications and Information Technology division of Ontario (CITO).

The license agreement with the University allows Micromem access to this MRAM technology on favorable financial terms, and provides Micromem substantially greater benefit than the company's previous licensing agreement with Estancia.

The deal gives Micromem full control over the last three years of technological innovation including the development of the single bit memory prototype announced last February. The company now has worldwide exclusivity on all prior, current, and future patent applications relating to this MRAM technology.
In addition the agreement strongly positions Micromem to explore industrial partnerships to accelerate the development and availability of commercial MRAM products.

NVE announced that it has been notified by the U. S. Patent and Trademark Office that the patent titled "Magnetic Field Sensor with Augmented Magnetoresistive Sensing Layer" will be issued today. The patent relates to the use of an effect known as "electron spin exchange-biasing" for low-hysteresis spin dependent tunneling (SDT) and giant magnetoresistance (GMR) sensors. The patent is number 6,872,467 and is the grant of the application published by the U.S. Patent and Trademark Office under number 2004-0115478.
SDT and GMR sensors applications include magnetic disk read heads and MRAM. The invention reduces hysteresis, which can cause errors and signal loss.
"This is an important sensor innovation," said NVE Founder and Chief Technology Officer James M. Daughton, Ph.D. "It enables better linear magnetic field sensors and could have wide applications."

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