NVE Corporation said today that it has been notified by the U.S. Patent and Trademark Office of the expected grant of a key patent for magnetothermal Magnetoresistive Random Access Memory (MRAM).
NVE has been notified that the patent, titled "Thermally Operated Switch Control Memory Cell," will be issued today. The patent is number 6,963,098 and is the grant of a patent under the application published by the U.S. Patent and Trademark Office as number 2005-0002267.
Magnetothermal MRAM uses a combination of tiny magnetic fields and ultra-fast heating, both from electrical current pulses to reduce the energy required to write data and reduce the size of memory cells while maintaining thermal stability. This has the potential to enable low power, dense MRAM. NVE has two previously announced magnetothermal MRAM development contracts with Department of Defense agencies, both with a goal of showing the design feasibility of one-gigabit magnetothermal MRAM chips.
