September 2023

Here are some recent and popular news that you may find of interest:

• NETSOL launches stand-alone STT-MRAM, fabricated at Samsung's Foundry
• STT-MRAM developer Numem secured its Series A funding round
• Researchers say MnPd3 will enable a breakthrough in SOT-MRAM memory devices
• NXP and TSMC to offer 16 nm FinFET automotive embedded MRAM
• Everspin launches a new family of SPI interface MRAM products
• Everspin to build a new MRAM production line in Indiana
• Renesas develops 22-nm circuit technologies for embedded STT-MRAM
• Samsung first to demonstrate MRAM-based in-memory computing
• IBM to reveal the world's first 14nm STT-MRAM node
• ITRI and UCLA to co-develop VC-MRAM technologies
• Samsung improves its MRAM performance, to expand target applications
• TSMC shows its eMRAM technology roadmap
• Samsung is progressing towards 14 nm eMRAM

pMTJ STT-MRAM developer Avalanche Technology announced that it is providing its Space Grade Persistent SRAM (P-SRAM) STT-MRAM products for satellite-based storage systems developed by RAiTEK. 

RAiTEK has designed in a 16Mb device from Avalanche's Gen 2 Space Grade family to monitor data stream status, and a 1Gb Gen 3 Space Grade to support large configuration images for the onboard FPGA used in the drives, as part of their growing portfolio of data storage and processing solutions for the space industry.

High-performance STT-MRAM developer Numem announced that it has secured a Series A funding round, with investments from Cambium Capital and Doorga Capital. The company did not detail the investment amount.

In 2020, Numem announced that it has been selected for a NASA AI project, for which the company will supply its Numem NuRAM MRAM-based Memory.

Researchers from the Tokyo Institute of Technology have successfully demonstrated fast p-MTJ switching (1 ns, compared to current switching that is >10 ns). "The researchers achieved this using the topological insulator BiSb as the SOT layer, and say the device offers a current density about 20 times smaller than typical.

The researchers say that this technology can be applied to develop p-MTJs for SOT-MRAM that will offer ultrafast operations and ultra low power consumption, while also offering higher reliability. This follows earlier work by the same group on BiSb p-MTJs.