Renesas has released a presentation about their flash memory products, which also includes one slide about their flash memory roadmap. The roadmap includes Floating Gate HND (Hyper New DINOR), MONOS (metal Oxide Nitride Oxide Silicon) and also MRAM.
They plan to have 100 to 150Mhz MRAM at 90nm at around 2010, and 200Mhz MRAM at 65nm at around 2012. They say MRAM is the next-generation RAM, a breakthrough beyond the limit of flash memory.
Posted: Mar 13,2010 by Ron Mertens
