NVE Corporation was granted a patent today
relating to tamper detection and protection using magnetoresistive
sensing memory storage. The patent is number 7,468,664 and titled
"Enclosure tamper detection and protection."
Magnetoresistive memory, commonly known as MRAM, is an integrated-circuit memory which uses electron spin to store data.
The grant brings NVE's U.S. patent total to 50.
Magnetoresistive memory, commonly known as MRAM, is an integrated-circuit memory which uses electron spin to store data.
The grant brings NVE's U.S. patent total to 50.
Posted: Dec 23,2008 by Ron Mertens