IBM posted some new MRAM research papers. This group of papers pertain to advances that have occurred over the past decade in related structures that combine magnetic metallic multilayer films with ultra-thin insulating layers (tunnel barriers), semiconducting layers, or both.
The structures are being developed for a diverse set of potential applications such as nonvolatile random access memory, improved magnetic sensors, and new RF and microwave frequency oscillators and radiation sources. The first six papers relate to the development of magnetic random access memory (MRAM) technology, based on the use of the magnetic tunnel junction. The next four deal with other aspects of spin transport electronicsâspintronics, including especially spin transport in semiconductors.
