In October 2018 Intel revealed that it is developing embedded MRAM - and that the company has successfully integrated embedded MRAM into its 22nm FinFET CMOS technology on full 300mm wafers.
Now Intel gave more details on its embedded STT-MRAM, and said that the technology is ready for high-volume manufacturing. Intel said it has used a "write-verify-write" scheme and a two-stage current sensing technique to create 7Mb perpendicular STT-MRAM arrays in its 22FFL FinFET process.
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Posted: Feb 20,2019 by Ron Mertens