IBM announced that during the 2020 IEEE International Electron Devices Meeting (IEDM 2020), that is now being held virtually, its researchers will reveal the first 14 nm node STT-MRAM. IBM says that efficient and high-performance STT-MRAM systems will help to address memory-compute bottlenecks in hybrid cloud systems.
IBM says that the 14 nm node embedded MRAM which will be revealed is the most advanced MRAM demonstrated to date. It features circuit design and process technology that could soon enable system designers to replace SRAM with twice the amount of MRAM in last-level CPU cache.
IBM also demonstrated advanced magnetic materials with high-speed of 3 ns switching and tight distributions of the switching current. The company says that optimizing switching speed characteristics is another key step toward use of MRAM as last-level cache.
In 2016 IBM researchers, in collaboration with Samsung researchers, demonstrated switching MRAM cells for devices with diameters ranging from 50 down to 11 nanometers in only 10 nanoseconds, using only 7.5 microamperes.
