Freescale Semiconductor Inc. presented an MRAM that uses magnesium oxide, rather than an aluminum material, in the write layer. Saied Tehrani, director of MRAM technology, said Freescale will replace aluminum oxide with magnesium oxide, which will improve the bit resistance during the write cycle. Also, the tunneling layer can be thinned slightly.
Posted: Dec 19,2005 by Ron Mertens
