MRAM Manufacture

20 chipmakers from Japan and US to co-develop MRAM in hopes to replace DRAM within 3 years

According to Nikkei, over 20 Japanese and US companies have teamed up to develop MRAM technologies, in particular a new mass production method. Participants in this ambitious project include Tokyo Electron (who's merging with Applied Materials), Renasas, Hitachi and Shin-Etsu Chemical from Japan and Micron Technology from the US.

Japan's Tohoku University, a leader in Spintronics and MRAM research, will also join the project. The companies will finance several dozens researchers at the University. They plan to start development in February 2014, and continue to seek more companies from the US and Europe to join. The aim is to complete materials and processes development by 2017 and start mass production by 2018.

Read the full story Posted: Nov 24,2013

A leading edge semiconductor maker orders a full suite of STT-MRAM metrology tools from MicroSense

MicroSense announced that they installed a full suite of STT-MRAM magnetic metrology tools at a leading edge semiconductor manufacturer. These metrology systems characterize the magnetic properties of multi-layer 300 mm wafers or coupons used in the development and manufacturing of Perpendicular and In-Plane STT-MRAM.

The company says that this is the first time a major customer ordered a full suite of their tools to use in an STT-MRAM program. This order includes a Polar Kerr system for 200mm or 300mm Perpendicular STT-MRAM wafers and a KerrMapper tool for 200mm or 300mm In-plane STT-MRAM wafers. MicroSense's EZ Vibrating Sample Magnetometer measures sample coupons from Perpendicular or In-Plane STT-MRAM wafers.

Read the full story Posted: Jan 15,2014

A*STAR researchers shed light on STT-RAM chip production temperature trade-offs

Researchers from A*STAR have posted an interesting study about STT-RAM production process. In particular, they say that it's already known that the annealing temperature controls the change in resistance between parallel and anti-parallel magnetizations. The higher the annealing temperature, the better larger the resistance change - but if the temperature is too high it drops.

The researchers now looked at an entire cell, and found out that the annealing temperature that yielded the maximum resistance variation exceeded the temperature necessary for maximum thermal stability.

Read the full story Posted: Aug 05,2012

Agilent Technologies Reduces Endurance Test Time for Non-Volatile Memory Cells From Days to Hours

Agilent Technologies today announced new hardware and software capabilities for its B1500A Semiconductor Device Analyzer and EasyEXPERT software test shell, which reduce the time required for the testing and characterization of advanced non-volatile memory (NVM) cells and other next-generation semiconductor devices.

The Agilent B1500A meets the industry’s need for an instrument-based solution that supports modern NVM technology requirements, including MRAM, PRAM, RRAM, NAND and NOR Flash, such as support for voltages greater than 20 V and precise control over the pulse level, and leading and trailing edges. The B1500A with EasyEXPERT and the HV-SPGU is designed to allow users to complete endurance testing of NVM cells up to 10 times faster than with previous solutions.

Read the full story Posted: Apr 18,2007

Analysts expect MRAM revenues to grow 170X by 2029 to reach $4 billion

A new market report by Objective Analysis and Coughlin Associates expects that stand-alone MRAM and STT-MRAM revenues will grow 170X from 2018 to 2029, reaching almost $4 billion in revenues. The growth of next-generation memory technologies will be mainly driven by displacing today’s less efficient memory technologies like NOR flash and SRAM.

MRAM capacity shipments forecast (2017-2029, Coughlin)The analysts expect many memory technologies, including DRAM, 3D Xpoint and NAND to grow in the coming years, but the most stellar growth will be of MRAM memories. Shipments in terms of capacity are expected to grow from around 0.1 Petabytes in 2019 to almost 1 million Petabytes by 2029.

Read the full story Posted: Jul 09,2019

Applied Materials unveils new high-volume 300mm MRAM manufacturing system

Applied Materials unveiled new high-volume manufacturing solutions for next-generation memories. The Endura platform integrates multiple materials engineering technologies along with on-board metrology to create new films and structures.

Applied Materials Endura Clover MRAM PVD system photo

Applied’s new Endura Clover MRAM PVD platform is made up of nine unique wafer processing chambers all integrated in pristine, high-vacuum conditions. Applied says that this is the industry's first 300-millimeter MRAM system for high-volume manufacturing capable of individually depositing up to five different materials per chamber. The Clover MRAM PVD platform includes on-board metrology that measures and monitors the thickness of the MRAM layers with sub-angstrom sensitivity as they are created to ensure atomic-level uniformity.

Read the full story Posted: Jul 12,2019

Avalanche and ISI developed a new wafer level analyzer for STT-MRAM

Avalanche Technology and Integral Solutions International (ISI) have designed a Wafer Level Analyzer, the WLA-3000, to be used in STT-MRAM development.

The WLA-3000 includes specific hardware test modules including nS-range Pulse Generator that quickly measures switching currentse of MTJ devices in STT-MRAM as a function of Pulse Width. Using this Pulse Generator module, customers will be able to perform Error Rate, Switching Probability, Endurance Testing, and Read/Write Disturb analysis in a fraction of time as compared to other slower pulsers.

The WLA-3000 system is fully compatible with ISI’s FMRA-2008 Ferromagnetic Resonance Analyzer to offer the worlds most advanced and complete MTJ sensor analysis.

Read the full story Posted: Jul 09,2009

BAE Systems to productize Micromem's patented technology

Micromem Technologies is pleased to announce that BAE Systems, the premier global defense and aerospace company, is in the process of transferring the Micromem's MRAM and sensor technology to its Nashua New Hampshire foundry facility. BAE Systems plans to complete the productization of Micromem's technology over the coming months. The focus is for the planned integration of Micromem's patented technology into the BAE Systems military platforms and product pipeline.

Micromem's patented submicron nano-sensor technology can enable and enhance highly accurate magnetometers and "over-the-horizon" threat detection solutions for application in homeland security and defense force protection. The technology is also applicable in enabling solutions in many other areas such as providing early detection and "pre-failure" weak-parts/defect identification in product manufacturing. The intrinsic low-power characteristics of Micromem's technology lend itself to numerous new applications as well as suitability into harsh environments such as those experienced in the aerospace and automotive sector.

Joseph Fuda, President and CEO stated, "This partnership is the ultimate technical validation that Micromem has been looking for. To partner with a global leader such as BAE Systems is the ideal situation for Micromem and the successful productization of our technology. The vast array of applications that BAE Systems can facilitate through its client base will fundamentally change the face of the company and its future."
Read the full story Posted: Apr 01,2008

Coughlin sees the MRAM market growing to over $1.3 billion in 2020

A new report from Coughlin Associates says that in the near future we will see dramatic changes in the memory market as as fast non-volatile memories augment and eventually replace volatile memory.

Memory technology shipping storage capacity forecast (Coughlin)

MRAM (and STT-MRAM) annual shipping capacity will rise from 240TB in 2014 to between 15 and 35 PB in 2020. MRAM and STT-RAM revenues are expected to increase from about $300 million in 2014 to between $1.35 and $3.15 billion by 2020.

Read the full story Posted: Nov 15,2015

Crocus buys MRAM measurement equipment from CAPRES A/S

CAPRES logoCrocus announced today that it has implemented CIPtech, the newest tool from CAPRES A/S, for enabling measurements associated with advanced Spin Torque Technology (STT). This unique new tool, designed especially for the MRAM and magnetic recording Read Head industries, enables Crocus to determine tunneling resistance on MTJ films prior to final test. With this upgrade, measurement that used to require weeks of sample preparation can now be performed within minutes.

The CIPTech platform is used for measuring the critically important tunneling resistance and magneto-resistance (RA MR) directly on blanket magnetic tunnel junction (MTJ) films for MRAM (Magnetic Random Access Memory) and magnetic recording Read Head applications. The latest vertical magnetic field capability of the tool allows characterizing next-generation MRAM devices based on Spin Torque Transfer (STT). With this tool, Crocus is now equipped for efficient prototyping and manufacturing of advanced STT.

As we reported last month, Crocus is planning to have MRAM products by the end of the year, and are also working on STT-RAM.

 

Read the full story Posted: Apr 17,2009