Hprobe, a developer of testing equipment for magnetic devices, announced that it developed a new technology for ultra-fast (
Hprobe will integrate the new technology into its Hprobe ATE systems to drastically enhance the sorting flow of STT-MRAM wafers at major 300mm foundries.
Everspin Technologies announced a partnership with Sage Microelectronics Corporation under-which Sage will provide native support for Everspin's 1Gb STT-MRAM memory in its Enterprise Grade Flash memory controller.
Sage provides cutting-edge, enterprise-class controllers for industries including, aerospace, automotive, industrial and data center storage solutions, offering SSD storage solutions and also delivering high-performance RAID/Port-Multiplier controllers.
Everspin Technologies announced that Phison Electronics Corp. will provide native support for Everpsin's 1 Gb STT-MRAM memory in its next generation enterprise SSD controller lineup. Everspin says that its MRAM technology, added to Phison's controllers, will enable storage system designers to increase the reliability and performance of systems where high-performance data persistence is critical. MRAM will enable protection against power loss without the use of batteries or supercapacitors.
Phison Electronics ships over 600 million NAND flash controllers annually.
The 2019 MRAM Developer Day will be held on August 5th at the Santa Clara Convention Center (co-located
with Flash Memory Summit), and will center around Everspin's 1Gb MRAM part now in production.
Keynotes from Everspin, Tokyo Electron, and Applied Materials will focus on MRAM as a disruptive technology and on new manufacturing tools and processes for STT-MRAM. Plenary sessions will cover the current state of MRAM technology and MRAM markets and future trends through 2025, while breakout sessions will cover applications briefs, embedded MRAM, development, and AI applications.
Everspin Technologies announced that it completed the development activity and entered the pilot production phase of its 28 nm 1-Gigabit (Gb) STT-MRAM chips. Everspin targets the enterprise infrastructure and data center markets which can utilize its MRAM technology to increase reliability and performance.
Everspin 1-Gb chip family (EMD4E001G) includes both 8-bit and 16-bit DDR4 compatible (ST-DDR4) interface versions of the device and are available in a JEDEC-compliant BGA package.
pMTJ STT-MRAM developer 
Avalanche Technology announced that it closed its latest funding round led by Thomvest Ventures, having raised $33 million.
Avalanche currently brands its MRAM chips as P-SRAM (persistent SRAM) devices. The new funds will enable the company to develop higher-density P-SRAM devices. In addition, Avalanche says it will develop the higher densities of "persistent DRAM" required for the next generation of machine learning architectures.
Everspin announced its financial results for Q4 2018. Revenues in the quarter grew 21% from last year to reach $12.3 million, while total year revenues in 2018 grew 38% from 2017 to reach $49.4 million. Net loss in the quarter was $3.5 million (down from $4.4 million in Q4 2017). Net loss for the whole 2018 was $17.8 million (down from $21.1 million in 2017).
Everspin says that it has increased the production volume of its 40nm 256Mb STT-MRAM in support of its lead flash array customer. Everspin ended 2018 with with cash and cash equivalents of $23.4 million.
In October 2018 Intel revealed that it is developing embedded MRAM - and that the company has successfully integrated embedded MRAM into its 22nm FinFET CMOS technology on full 300mm wafers.
Now Intel gave more details on its embedded STT-MRAM, and said that the technology is ready for high-volume manufacturing. Intel said it has used a "write-verify-write" scheme and a two-stage current sensing technique to create 7Mb perpendicular STT-MRAM arrays in its 22FFL FinFET process.
Everspin Technologies announced that it started to ship pre-production customer samples of its 28 nm 1Gb STT-MRAM chips in December 2018. Everspin already announced that it started to sample these new 1Gb STT-MRAM chips in November 2018.
In November 2017 Everspin announced it will delay its 1Gb STT-MRAM chips as its focus has shifted to its 256 Mb STT-MRAM chips. It is great, tough, to see Everspin progressing with its larger MRAM chip and we hope that mass production will begin, as planned, in the middle of 2019.
Researchers from Japan's Tohoku University developed a 128 Mb STT-MRAM device that features a write speed of 14 nm, the world's fastest STT-MRAM chip at a density over 100 Mb.
To achieve this high speed, the researchers developed MTJs that are integrated with CMOS, which also significantly reduces the power-consumption of the memory device.
