Taiwan-based Industrial Technology Research Institute (ITRI) announced an agreement with the University of California, Los Angeles (UCLA) to co-develop Voltage-Control MRAM (VC-MRAM) technologies.
ITRI says that VC-MRAM is a type of SOT-MRAM that offers improved performance - 50% higher writing speed and 75% less energy consumption. VC-MRAM is said to be ideal for AIoT and automotive industry applications. The partnership is expected to strengthen the link between both parties and accelerate the R&D and industrialization of new memory technologies.
This project is supported by Taiwan's Department of Industrial Technology (DoIT), Ministry of Economic Affairs (MOEA) and the US Defense Advanced Research Projects Agency (DARPA)