Videos

Researchers from Northwestern University suggest building STT-MRAM devices from antiferromagnetic materials - as opposed to the currently-used ferromagnetic ones. The researchers say that these materials will enable higher-density devices that feature high speed writing with low currents.

Antiferromagnetic materials are magnetically ordered at the microscopic scale, but not at the macroscopic scale. This means that there is no magnetic force between adjacent bits in MRAM cells built from these materials - which means you can pack them very close together.

In March 2017 Everspin announced its nvNITRO line of storage accelerators, with 1GB and 2GB capacities, based on the company's 256Mb DDR3 ST-MRAM chips. Everspin is accepting orders for these accelerators which should start shipping by the end of the year.

In the video above you can see a recent demonstration by Everspin of how these nvNITRO accelerators provide superior latency determinism enabling a Low Latency Write Buffer for applications such as Apache Log4J.

ActualTech Media RoadCast posted an interview with Spin Transfer Technologies (STT) CEO, Tom Sparkman, who explains the company's history, technology and business:

ActualTech Media also posted an interview with STT's VP of product, Andy walker, who gives an MRAM technology primer:

Luc Thomas from Headway, a TDK-owned recording head designer and producer, explains the basic principles and challenges of STT-MRAM for embedded memory applications:

This lecture was given at the MSST 2017 Mass Storage Conference (May 15 — 19, 2017).

An interesting interview with Nobel Laureate (1998, Physics) Albert Fert regarding the future of spintronics, STT-MRAM, topological insulators and more:

Mark Stiles, from the NIST's Center for Nanoscale science and technology, gave an interesting lecture titled "Spin Current: the Torque Wrench of Spintronics" in which he discussed spintronics challenges, especially for spin-torque memory devices:

Here's an interesting video interview with Joe O'Hare, Everspin's Director of Product Marketing. Joe explains the company's MRAM (and ST-MRAM) tech and business, especially how it relates to enterprise SSD, which seems to be the focus of MRAM applications at the moment:

During the interview, Joe updates that everspin is now designing a 256Mb chip, and this will be the next product the company will introduce. Currently their highest-density chip is the 64Mb ST-MRAM chip (announced in 2012, but only ramped-up recently).

Tweaktown posted an interview with Everspin's CEO, Philip LoPresti, who explains the company technology and business.

Philip says that while Everspin currently ships only 64 Mbit STT-MRAM, they have plans to increase the density up to a Gigabit within the next few years.

Last week Everspin announced their first ST-MRAM product, and today we found this nice video showing a tour of Everspin's booth at LSI AIS 2012 and explaining the company's technology and products. The explanation is given by Joseph O'hare, Everspin's director of product marketing:

Micron announced that it is now mas-producing 45-nanometer Phase Change Memory (PCM) for mobile devices, featuring 1-gigabit (Gb) PCM plus 512-megabit (Mb) LPDDR2 in a multichip package. This is the first time that PCM memory is available in volume production.

The 45nm PCM is targeted for feature phones, with a future roadmap aimed at addressing smartphones and media tablets.