Spin Transfer Technologies (STT) announced that it has signed an agreement with Tokyo Electron (TEL) to collaborate on the development of next-generation SRAM and DRAM-class STT-MRAM devices.
Spin Transfer Technologies says that the combination of its STT-MRAM technology with TELâs advanced PVD MRAM deposition tool will allow the companies to quickly develop processes for the highest density and endurance devices.
As part of this agreement, STT and TEL will demonstrate sub-30nm pMTJâs, 40 to 50 percent smaller than other commercial solutions.
A few days ago STT announced that it has raised $22.8 million via a convertible bridge facility while the company gets ready to complete its Series B funding round, targeting strategic investors and planned to conclude by end of Q1 2018.
In January 2017 STT announced that it has started to deliver fully functional ST-MRAM samples to customers in North America and Asia. The sample devices are based on the company's Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM), and use 80nm perpendicular magnetic tunnel junctions (MTJs)., the latest generation of MRAM technology.
In September 2016 Spin Transfer Tech announced that it fabricated 20nm perpendicular MRAM magnetic tunnel junctions (MTJs) based on the company's Orthogonal Spin Transfer MRAM (OST-MRAM). In 2015 the company raised $70 million (in addition to $36 million raised in 2012). Back in October 2008 we interviewed Vincent Chun, who was then the executive in charge of the company.
