Spin-Ion Technologies, established in 2017 as a spin-off from CNRS, developed a unique patented process that increases the performance of MRAM magnetic layers - by improving the homogeneity, increasing the magnetic performance and increasing yields.
The process is based on an ultra-fast ion beam treatment of the multilayer stack enabling improved structural properties. Spin-Ion's technology can be integrated with the deposition system as a plug-in ion beam module that allows very high throughput.
Company Address
Centre de Nanosciences et nanotechnologies (C2N)
10, boulevard Thomas Gobert
91120 Palaiseau
France
