Here are some recent and popular news that you may find of interest:
- Researchers from UNIST design a high-efficiency graphene-based MRAM device
- Samsung details its eMRAM roadmap with 5 nm expected by 2027
- Everspin and QuickLogic to bring MRAM technology to radiation hardened FPGAs
- MRAM-based memory architecture could accelerate AI by a factor of 1000
- Everspin awarded a $14.55 million project to provide stable MRAM manufacturing
- Leading the Charge in MRAM: An Interview with Everspin's CEO
- Researchers from IST and Western Digital develop a promising new SOT-MRAM material
- Purdue University team to develop energy efficiency MRAM-based AI
- Kioxia and Hynix co-develop the world's smallest 1Selector-1MTJ cell
- Renesas achieves the world's fastest STT-MRAM random access speed
- IBM's next-gen FlashCore modules to feature Everspin's 1 Gbg STT-MRAM
- Researchers say MnPd3 will enable a breakthrough in SOT-MRAM memory devices
- NXP and TSMC to offer 16 nm FinFET automotive embedded MRAM
- Samsung first to demonstrate MRAM-based in-memory computing
Posted: Dec 26,2024 by Ron Mertens