NVE Corporation announced today that its founder, James M. Daughton, Ph.D., has been named a 2008 co-recipient of the prestigious IEEE Daniel E. Noble Award.Â
The award is sponsored by the Motorola Foundation and presented by the IEEE, which is considered the world's leading professional association for the advancement of technology. According to the IEEE, the award is "for fundamental contributions to the development of magnetoresistance devices for non-volatile, high density, random access memory."
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Daughton founded NVE in 1989 and was Chairman and CEO for most of its history. From 2001 until 2006 he was the company's Chief Technology Officer. Daughton has published approximately 80 papers and been granted approximately 40 U.S. patents. His inventions are at the heart of NVE's technology portfolio.
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Much of Daughton's MRAM work has been in collaboration with Arthur V. Pohm, Ph.D., an Emeritus Professor of Electrical and Computer Engineering at Iowa State University and longtime NVE employee. Daughton and Pohm's recent inventions relate to next-generation MRAM technologies including magneto-thermal MRAM and spin-momentum transfer MRAM.
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Magnetothermal MRAM uses a combination of ultra-fast magnetic fields and heat pulses, both from electrical current. Spin-momentum transfer is a method of changing the spin of storage electrons directly with an electrical current rather than an induced magnetic field. Both technologies may have the potential to reduce the energy required to write data and allow reducing memory cell size while maintaining thermal stability.
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The Daniel E. Noble Award presentation is scheduled for September 2008. Co-recipients are Saied Tehrani of Freescale, Inc. and Stuart Parkin of IBM.
Posted: Dec 04,2007 by Ron Mertens
