June 2024

The New York Center for Research, Economic Advancement, Technology, Engineering, and Science (NY CREATES) and CEA-Leti announced a two-year strategic R&D partnership, that will initially focus on the research and co-development of MRAM devices.

NY CREATES and CEA-Leti will develop and produce both STT-MRAM and SOT-MRAM devices on 300 mm substrates. CEA-Leti will contribute its expertise in magnetics, spintronics, and the testing of related devices, and NY CREATES will provide the facilities, process integration expertise, and materials process development to run the 300mm silicon hardware.

Alif Semiconductor announced a new microcontroller in its Ensemble family, the E1C, that offers 46 giga-operations per second (GOPS) of minimum-precision compute for on-device machine learning and artificial intelligence workloads.

The Alif E1C offers several memory options, depending on the model, ranging from 256Kb of SRAM in the entry-level option, up to 1.9Mb of MRAM and 2Mb of SRAM in the high-end option.

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In 2019, Samsung Electronics announced that it has started to mass produce its first embedded MRAM devices, made using the company's 28 nm FD-SOI process. In 2021, Samsung announced it is working to scale down to 14 nm processes.

The company now says that it has finalized the development of its 14 nm eMRAM process, and will be read to mass produce it by the end of 2024. The company says that the 14 nm process achieve a 33% area scaling compared to its 28 nm process, and it also enables a 2.6x faster read cycle time. Samsung says that its eMRAM enables the smallest size 16MB memory die.