Crocus Technology announced the development of a new STT-MRAM technology with a minimum feature size of 50nm that will deliver on the promise of using STT memory in high-density memory
applications, that will be competitive with DRAM and NOR-Flash.
The final day of the Flash Memory Summit started with a panel on new memory technologies.
Crocus Technologies presented their TAS MRAM design which is targeted at SRAM and flash applications. Their product compared to SRAM at a 25% smaller cell, adding Non-Volatile capability, and a zero standby current. The product compared to NAND flash by having a smaller cell and only 1X area overhead for controlling circuitry. It is currently being built on a 130nm node and can be scaled. It is targeted at Cache memory, data logging, medical instrumentation, casino gaming and industrial control applications. They are targeting several business models - selling the standard product ICs, licensing IP a process technology licensing service and providing a foundry service.
Crocus announced today that Israeli Tower fab will manufacture their next-gen MRAM chips. Tower has an exclusive agreement to make the MRAM chips at their 200mm Fab2 facility. Tower has also invested 1.25$ at Crocus.
Crocus aims to start making the chips towards the end of 2009.
Crocus' basic technology is based on Field-Induced MRAM (Toggle MRAM), which is in some ways similar to Everspin's technology (or 1st generation MRAM). Historically, Field-Induced MRAM is very hard to scale, and has stability and retention problems. Crocus aims to solve all this using a thermally activated magnetic latch. They call their technology Thermally Assisted Switching or TAS. Basically this means that the latch helps the cell retain the memory value very well. It can also scale quite well. We have talked to Crocus' CEO, back in March 2009.
Crocus announced today that it has implemented CIPtech, the newest tool
from CAPRES A/S, for enabling measurements associated with advanced Spin
Torque Technology (STT). This unique new tool,
designed especially for the MRAM and magnetic recording Read Head
industries, enables Crocus to determine tunneling resistance on MTJ
films prior to final test. With this upgrade, measurement that used to
require weeks of sample preparation can now be performed within minutes.
The CIPTech platform is used for measuring the critically important tunneling resistance and magneto-resistance (RA MR) directly on blanket magnetic tunnel junction (MTJ) films for MRAM (Magnetic Random Access Memory) and magnetic recording Read Head applications. The latest vertical magnetic field capability of the tool allows characterizing next-generation MRAM devices based on Spin Torque Transfer (STT). With this tool, Crocus is now equipped for efficient prototyping and manufacturing of advanced STT.
As we reported last month, Crocus is planning to have MRAM products by the end of the year, and are also working on STT-RAM.
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Crocus Technology announced two new patent grants by the US Patent and
Trademark Office and the French Institut National de la Propriete
Industrielle (INPI). The new patents cover use in specialized memory chips known as Content Addressable Memories (CAM), opening the way to denser, faster and less power-hungry CAM, as well as innovative developments in the physics, materials, and manufacturing of MRAM chips with high data stability. Commercialization of these technologies holds the promise of low cost, advanced technology MRAM to be used in applications ranging from mobile phones and disk drives to personal computers and network routers.
Jean-Pierre Braun, the CEO of Crocus technologies, is visiting Israel these days, and I had the good chance of meeting him. Crocus' technology is based on work done by the French Spintec research center. In fact they get an exclusive access to Spintec MRAM related research and patents for the next 15 years.
Crocus' basic technology is based on Field-Induced MRAM (Toggle MRAM), which is in some ways similar to Everspin's technology (or 1st generation MRAM). Historically, Field-Induced MRAM is very hard to scale, and has stability and retention problems. Crocus aims to solve all this using a thermally activated magnetic latch. They call their technology Thermally Assisted Switching or TAS. Basically this means that the latch helps the cell retain the memory value very well. It can also scale quite well. This also (theoretically) will allow them to pack more than 1 bit per cell... some day.
Jean-Pierre says that many companies are doing 'Thermal MRAM' - which only means heating the material for easier handling. But Crocus technology is very different - because of the use of this magnetic latch, not just heat by itself.
Crocus already has a 'small' (few KBits) working sample of their memory, and towards the end of 2009 they will hopefully get a real product out. I can't say much yet, but this product will have a higher-density than Everspin's products (currently 4Mbit), smaller size and will also be considerably cheaper. This is great news, and hopefully they'll be able to pull it off. Even though the largest MRAM market is for embedded memory, the first Crocus product will be stand-alone.
Obviously these are hard times - especially for start ups and companies that are still losing money. Crocus has already raised around US$30M, but they aim to break-even in 2010 or 2011. They will still require another round of investment, but hopefully a small one.
Crocus are also working on STT-RAM. Jean-Pierre thinks that the best way forward is Perpendicular STT-RAM, which is currently lead by Toshiba. Crocus' MRAM road map looks like this -
But volume production of STT-RAM is still way off, probably "at least 4-5 years" away according to Jean-Pierre.
In the happy days of 2004, MRAM was hyped as the universal memory - being able to replace your SRAM, DRAM, FLASH and H/D - all in one chip. This is great - but not realistic - at least Jean-Pierre does not believe it. It will require some serious technological breakthrough to compete in particular with NAND Flash, and he just can't see it happen anytime soon. Better to focus on 'niche' memory markets that will take full advantage of the specifics of MRAM - infinite endurance and fast write & read cycles, reliability, small die size and low memory requirements. I'm also quite tired of the old MRAM buzz and hype, and hopefully Crocus and other companies are more sober today and this might actually lead to commercial products. Good luck!
Crocus has raised 16.1M$ from VCs and government grants. The grants are from the French research and development agency OSEO.
The company says the new funding will allow it to complete its technology development phase, in advance of product introductions
Crocus Technologies today announced that it has qualified its complete manufacturing environment for the development and rapid prototyping of MRAM. Building upon conventional 130nm CMOS sourced at a leading foundry, Crocus is leveraging Silicon Valley-based SVTC's capabilities to complete the integration of its second-generation MRAM technology. To complement these two facilities and achieve a complete MRAM manufacturing capability, Crocus has invested more than 5 million Euros to purchase and deploy a full suite of dedicated magnetic-technology wafer processing tools for the deposition, annealing, patterning, and metrology of MRAM memory chips. With this investment and these achievements, Crocus has positioned itself as one of the very few companies in the world capable of fully integrating advanced MRAM onto CMOS.
Crocus' proprietary MRAM technology solves all the well-known problems encountered in earlier MRAM developments. The company's technology has demonstrated its stability, reliability, data retention, endurance, and scalability, while exhibiting high speed, low power dissipation, and excellent resistance to external perturbation.
"We found at SVTC an ideal incubation and development environment," said Jean Pierre Braun, founder and CEO of Crocus Technologies. "SVTC is a modern foundry that provides a broad range of necessary equipment and processes. Furthermore, we have been able to install some of our own equipment in SVTC's clean room, and we have deployed a complete, full-time Crocus team there. This has allowed us to develop and integrate our proprietary MRAM manufacturing process with outstanding efficiency while maintaining full confidentiality of our IP and know-how."
"SVTC's independent development foundry model is a great fit for companies working to commercialize novel technologies as quickly as possible, while maintaining strong intellectual property positions," said Scott Marquardt, VP of Marketing at SVTC.
Tegal Corporation today announced that Crocus Technology SA, a startup company specializing in magnetic random access memory (MRAM), has placed an order for a Tegal 6500series critical plasma etch system outfitted with Spectra(TM) process modules. Crocus Technology SA of Grenoble, France recently received $17M in funding to commercialize MRAM technology and is in the process of starting a prototype and pilot plant for MRAM production.
The Tegal 6500 series tool features the Spectra ICP plasma source optimized for the etching of magnetic thin films for GMR/TMR magnetic head and MRAM memory device technology. The Spectra reactor is an extension of Tegal's patented dual frequency technology for the patterning of difficult-to-etch metal and metal oxide films based on inductively coupled plasma (ICP) technology. The Tegal 6550 als oincorporates a dual-chamber platform with patented rinse-strip-rinse process capability that is proven to eliminate corrosion in thin magnetic materials. Tegal's approach to magnetic thin film etching includes its proprietary "Stop-on-Dielectric" process capability.
Crocus Technology SA, a startup company specializing in magnetic random access memory, has raised $17 million in a Series A round of financing.
The money would be used to allow Crocus (Grenoble, France) to hire engineers and scientists in process engineering, test and design from Europe and the United States, Sofinnova Ventures said. Crocus also needs money to acquire specialized equipment to enable the company to complete a first memory test vehicle within 12 months and its first commercial product shortly thereafter, Sofinnova added.
