STT-MRAM - Page 22

IBM has linked with Japan's TDK to develop so-called spin torque transfer RAM (random access memory) or STT-RAM. In STT-RAM, an electric current is applied to a magnet to change the direction of the magnetic field. The direction of the magnetic field (up-and-down or left-to-right) causes a change in resistance, and the different levels of resistance register as 1s or 0s.

Under the current plan, IBM and TDK, an integral player in magnetic recording components for hard drives, will develop a 65-nanometer prototype within the next four years.

Grandis announced it has appointed Farhad Tabrizi as the company's president and chief executive officer (CEO). Tabrizi assumes the position from William Almon, Grandis co-founder, who remains a major shareholder.

“I am pleased to be joining a company with leading-edge memory developments supported by top industry technologists. Based on my experience in semiconductor memory, I see that its existing cell architectures are quickly reaching their technology limits. Compared to competitive alternatives, I sincerely feel STT-RAM (spin-transfer torque RAM technology) has the best potential for becoming the next generation unified memory architecture, replacing SRAM, NOR, DRAM and eventually NAND. Our initial prototype looks highly promising, and we will soon be ready to go to market, said Tabrizi.

Renesas and Grandis have agreed to collaborate on the development of 65 nm process MRAM employing spin torque transfer writing technology. Renesas Technology will start to ship microcomputers and SoC products incorporating 65 nm process STT-RAM(TM) in the near future.

"We are currently doing development work on MRAM technology employing high-speed and highly reliable conventional magnetic field data writing technology. We intend to use this technology in products such as microcomputers and SoC devices with on-chip memory," said Tadashi Nishimura, Deputy Executive General Manager of the Production and Technology Unit at Renesas Technology Corp. "Nevertheless, in view of factors such as the need to reduce writing instability and lower current requirements, we feel that spin torque transfer is a more appropriate technology for future MRAM produced using ultra-fine processes. Grandis has world-class spin torque transfer technology. We are confident that by fusing their technology with our production processes we will be able to develop a universal memory that combines high performance and excellent reliability."