Everspin - Page 9

Earlier this month we reported that Everspin filed for an IPO, and today we learned that the IPO's date is set to October 7. Everspin expects to raise about $45 million and start trading in the NASDAQ with the ticker "MRAM".

Everspin generated $26.5 million in revenues in 2015, up from $24.9 in 2014. Net loss was $18.2 million in 2015, up from $10.2 million million in 2014. Everspin sold products to over 600 end-customers in 2015, with the two largest customers were NXP and Avago Technologies (Broadcom) - each accounting for 13% of Everspin's revenues. NXP is a customer for Everspin's embedded and sensor solutions.

Everspin announced that its perpendicular (pMTJ) STT-MRAM memory is going to be deployed by Global Foundries as an embedded 22nm memory. Everspin licensed its technology global foundries which will offer this as part of its 22FDX platform.

The 22FDX platform targets emerging applications such as battery powered consumer devices, IoT, Advanced Driver Assistance Systems (ADAS) and Vision Processing. Customers of Global Foundries will now be able to embed MRAM memory in next-generation SoC and MCU based producers.

Everspin has filed for IPO, aiming to raise up to $45 million and start trading in the NASDAQ with the appropriate ticker "MRAM". If Everspin succeeds in its IPO, this should prove to be very positive for the MRAM industry and will enable to raise MRAM's technology awareness.

In its S-1 Form filing in preparation for the IPO, Everspin says that it generated $26.5 million in revenues in 2015, up from $24.9 in 2014. Net loss was $18.2 million in 2015, up from $10.2 million million in 2014. In the first six months of 2016 Everspin reports $12.9 in revenues and a net loss of $10 million. Everspin further announced that it has 86 employees - half of which are engaged in R&D.

Everspin announces that it is going to demonstrate the world's fastest solid-state drive (SSD) using its latest perpendicular ST-MRAM technology. The drive achieves continuous write operations of 1.5 Million IOPS, using Everspin's Everspin’s 256Mb DDR3 chips (manufactured by global foundries).

Everspin started sampling its new pMTJ ST-MRAM chips last month. The p-MTJ ST-MRAM offers improved performance, higher endurance, lower power, and better scalability compared to previous MRAM and ST-MRAM products. Everspin is developing on a scaled-down 1Gb version.

High-reliability aerospace component maker Cobham (formerly Aeroflex) says that its MRAM chips were used in the payload of the ExoMars program that will soon reach Mars (in October 2016).

ExoMars is a joint-endeavor between the European Space Agency (ESA) and the Russian Federal Space Agency (Roscosmos). ExoMars 2016 is the first mission, that will consist of a Trace Gas Orbiter (TGO) and an entry, descent and landing demonstrator module (EDM) known as Schiaparelli. The main objectives of this mission are to search for evidence of methane and other trace atmospheric gases that could be signatures of active biological or geological processes on Mars.

Aupera Technologies launched the world's first M.2 storage module based on Everspin's recently announced 256Mb pMTJ ST-MRAM. The Aup-AXL-M128, will be used in Aupera's All Flash Array system as a hardware acceleration engine for specific applications that require low latency and high performance.

Aupera says the company is excited at the future potential of this ST-MRAM based module. The ST-MRAM delivers four orders of magnitude BER reduction and more than 30% less power while quadrupling the capacity to 128MB as compared to the previous generation M.2 MRAM module.

Everspin announced that it has started shipping samples based on its perpendicular magnetic tunnel junction (pMTJ) ST-MRAM. The first chip is the EMD3D256MB - a 256Mb DDR device. This is Everspin's 3rd-gen MRAM technology.

The pMTJ ST-MRAM offers improved performance, higher endurance, lower power, and better scalability compared to previous MRAM and ST-MRAM products. The company (together with GlobalFoundries) is now focused on the production ramp of the 256Mb MRAM and is working on a scaled-down 1Gb version.

Everspin announced that it started shipping 256Mb ST-MRAM samples to customers. Everspin also plans to increase the density and sample 1Gb ST-MRAM chips later this year. The new chips demonstrate interface speeds comparable to DRAM, with DDR3 and DDR4 interfaces. Volume production is expected "soon".

The new EMD3D256 chips are based on Everspin's proprietary magnetic tunnel junction (pMTJ) spin torque technology - and the company expects the new technology to enable it to produce ST-MRAM in lower geometries - and higher densities beyond 1Gb in the future.

Everspin announced that IBM has demonstrated the company's Spin Torque DDR3 MRAM in the ConTutto platform in a Power8 system. IBM showed show how Everspin’s ST-MRAM operates as persistent memory, accelerating storage and server applications.

ConTutto is an IBM research configurable platform for innovation in the memory subsystem of an OpenPOWER node. The DDR3 interface on the Everspin Spin Torque MRAM makes it easy for developers to take advantage of the write speed and persistence of MRAM.

Everspin announced a new MRAM chip, the MR10Q010 - a 1Mb QSPI MRAM. Everspin says that at 104 Mhz, this is features the fastest non-volatile write speeds in the industry. The MR10Q010 is now available in both SOIC and BGA packages.

Everspin says that the new chip is suitable for applications such as enterprise RAID controllers - that can use the MR10Q010 as a journal memory that records continuously updated system metadata.