Researchers developed a promising antiferromagnetic MRAM device structure
Researchers from Northwestern University and the University of Messina in Italy developed a new MRAM memory device composed of antiferromagnetic materials, which could be beneficial for use in AI systems and cryptocurrency mining.
Antiferromagnetic materials (AFM), offer inherently faster dynamics than ferromagnetic materials (FM), have no macroscopic magnetic poles and can be scaled much better. AFM-based memory cannot be erased with external magnetic fields which could prove to be a major security advantage.