Spin Transfer Technologies starts sampling 80nm OST-MRAM chips
Spin Transfer Technologies announced that it started to deliver fully functional ST-MRAM samples to customers in North America and Asia.
The sample devices are based on the company's Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM), and use 80nm perpendicular magnetic tunnel junctions (MTJs)., the latest generation of MRAM technology.
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Posted: Jan 26,2017
