December 2008

NVE receives an MRAM patent - "Enclosure tamper detection and protection"

NVE Corporation was granted a patentÂ today relating to tamper detection and protection using magnetoresistive sensing memory storage. The patent is number 7,468,664 and titled "Enclosure tamper detection and protection."

Magnetoresistive memory, commonly known as MRAM, is an integrated-circuit memory which uses electron spin to store data.

The grant brings NVE's U.S. patent total to 50.

Read the full story Posted: Dec 23,2008

Seagate CEO sees MRAM as a competitor for DRAM and not H/D

Seagate's CEO talks again about MRAM (last month he said they are putting a lot of money into next-gen memory tech, including MRAM). He says that MRAM will be a competitor for DRAM and not H/D.

Via VentureBeat

Read the full story Posted: Dec 22,2008

IBM shows new STT-MRAM tech with 20-fold increase in capacity, up to 64Mbit

IBM is providing a preview of its new STT-MRAM technology. They have produced a 4-Kbit test device, using a magnetic tunnel junction (MTJ) with MgO tunnel barriers. They say that the new technology could enable a 64-Mbit MRAM (90nm). STT-RAM also uses less power than toggle MRAM. The STT-RAM is part of the joint-research with TDK, announced in 2007.

Read the full story Posted: Dec 16,2008

Micromem - MRAM RFID samples will be available by end of December

Micromem reports that their MRAM RFID samples will be available by the end of the month. The MRAM arrays are manufactured by Global Communications Semiconductor, and are currently undergoing full performance testing.

Micromem also says that BAE Systems has completed manufacturing of Micromem's wafers. BAE's initial products will also be delivered during December. BAE makes both MRAM arrays and Magnetic Sensors based on Micromem's tech.

Read the full story Posted: Dec 05,2008