Samsung and Hynix are to launch their STT-RAM JV in September (after having announced their intentions in January 2008).
The companies said they will engage in joint research and development (R&D) of spin-torque-transfer magnetic-random-access-memory (STT-MRAM) chips, and become the industry standard-setters for the next generation 450mm wafer fab market.
NVE Corporation has been notified by the U.S. Patent and Trademark Office of the expected grant today of two patents relating to spintronics.Freescale has decided to form a new company called EverSpin, and to give its MRAM technology portfolio to this new company. Several companies (New Venture Partners, Sigma Partners, Lux Capital, Draper Fisher Jurvetson and Epic Ventures) will invest 20M$ in the new company.
EverSpin will operate in a portion of Freescale's Chandler (Arizona, US) semiconductor foundry and take on about 50 existing company employees who were associated with the MRAM technology.
Toshiba is still working on 1Gb MRAM chips, and it's "almost ready". They are using Spin-RAM (STT-RAM), like IBM.
Toshiba's projections sees MRAM taking over DRAM in 2015.
