November 2007

NEC Corporation announced that it has succeeded in developing a new SRAM-compatible MRAM that can operate at 250MHz, the world's fastest MRAM operation speed. MRAM is expected to be the dominant next-generation memory technology as it realizes ultra fast operation speeds, nonvolatility - ability to retain data with the power off, and unlimited write endurance.

Verification at the SRAM speed level proves that the newly-developed MRAM could be embedded in system LSIs as SRAM substitutes in the future.

The unique MRAM was designed and fabricated by NEC and has a memory capacity of 1 megabit. Incorporating a memory cell with two transistors, one magnetic tunnel junction, and a newly-developed circuit scheme, the new design achieves an operation speed of 250MHz; double that of conventional MRAMs and almost equivalent to that of recent LSI-embedded SRAM.

The Hall Sensor forms an integral component of the Micromem MRAM design. The Hall Sensor is used to measure the external field of a magnet whose magnetization can be reversed by generating a current in a coil.

Having exceeded the test requirements on the Hall Cross Sensor device, we have authorized the foundry to accelerate their efforts on the complete MRAM cell manufacturing. We will have an additional update on actual memory cell testing prior to December 25, 2007.

As a result of this positive test data we have defined the first MRAM array sizes that we are targeting. These have been defined in concert with some of our interested end users who will ultimately utilize our memory. Our initial target MRAM array sizes are 40 bits, 256 bit, 512 bits and 1024 bits. In addition to these high-speed memory size requirements, we have been requested to design to a 16K bit memory array of low speed embedded memory. This will be used for identification purposes only where radiation hardened is the key parameter and typically high speed memory read write time is not critical.

Micromem continues to meet and or exceed the foundry targets. Management is committed to our investors to provide timely and informative press releases as we march the company towards full commercialization.

 

Japan's National Institute of Advanced Industrial Science and Technology (AIST) developed a current-perpendicular-to-the-plane (CPP) GMR device.

The CPP GMR device is developed by combining the spin injection magnetization reversal (spin injection) method and perpendicular magnetization technology. AIST aims at developing an MRAM with a capacity of 1 Gbit. The new device was presented at 52nd Annual Conference on Magnetism and Magnetic Materials (MMM), an international conference on magnetic recording now being held in Tampa, Florida.

Read more here (TechOn)

Toshiba Corporation today announced important breakthroughs in key technologies for MRAM. The company has successfully fabricated a MRAM memory cell integrating the new technologies and verified its stable performance.

In making these major advances, Toshiba applied and proved the spin transfer switching and perpendicular magnetic anisotropy (PMA) technologies in a magnetic tunnel junction, which is a key component in the memory cell.

Spin transfer switching uses the properties of electron spin to invert magnetization and writes data at very low power levels. It is widely regarded as a major candidate among next-generation principles for new memory devices. PMA aligns magnetization in the magnetic layer perpendicularly, either upward or downward, rather than horizontally as in in-plane shape anisotropy layers. The technology is being increasingly used to enhance for storage capacity for high-density hard disc drives (HDDs), and Toshiba has successfully applied it to a semiconductor memory device. With PMA data write operation and magnetic switching can be achieved at a low energy level. Toshiba also overcame the hurdle of achieving the required precision in the interface process and significantly cutting write power consumption.

In order to realize a miniature memory cell based on PMA, Toshiba optimized the materials and device structure of the new MRAM. Close observation of performance confirms stable operation (see the diagram for full explanation of structure). Toshiba will further enhance development toward establishing fundamental technologies within the coming years.

Development of the new MRAM technologies was partly supported by grants from Japan’s New Energy and Industrial Technology Development Organization (NEDO).

Micromem Technologies Inc. (OTC BB: MMTIF) is pleased to announce that it has raised $400,000 by way of arms length private placements ranging from $0.45-$0.48 per share. The shares issued will be subject to Rule 144. These funds are in addition to the previously announced financing dated October 18, 2007. These funds will be used to further the company's effort to commercialize its patented MRAM technology for a wide variety of uses beyond RFID applications. No commission was paid on this financing.

With respect to the company's previously announced financing efforts, management will continue to pursue this opportunity.