August 2007

Domain Technologies has announced the availability of its FPGA development card for Actel ProASIC3 FPGAs that includes 512 Kbytes of 35 ns non-volatile magneto resistive random access memory (MRAM) and an on-board device programmer. Measuring only 2.4" × 1.0" and priced at only $750.00 each, the standard A3P-MRAM development card comes with an Actel A3P1000 in an FGG256 package, allowing for speedy development of some of the most sophisticated designs. For development of applications that don't require so much FPGA fabric, a lower-cost version with an A3P250 device installed is available for only $640.00.

Magnetic materials for hard-disk heads use the same magnetic tunnel junctions (MTJs) as do the MRAMs IBM announced it was developing with TDK last week. Now, the U.S. National Institute of Standards and Technology (NIST) claims to have invented a process for fine-tuning MTJs for the next generation of HD heads, and perhaps even to enable denser MRAMs. "Our process was developed to show hard-disk head manufacturers how to fine tune the resistance of the buffer layer in their heads, but it may also help to improve the MTJs for denser MRAMs," said NIST physicist Josh Pomeroy.

With every semiconductor generation, engineers shrink devices more and more, which, unfortunately, changes the resistance of insulators—so-called buffer layers—especially when these films go below one nanometer thick, at which point they comprise of only a few atomic layers.

IBM has linked with Japan's TDK to develop so-called spin torque transfer RAM (random access memory) or STT-RAM. In STT-RAM, an electric current is applied to a magnet to change the direction of the magnetic field. The direction of the magnetic field (up-and-down or left-to-right) causes a change in resistance, and the different levels of resistance register as 1s or 0s.

Under the current plan, IBM and TDK, an integral player in magnetic recording components for hard drives, will develop a 65-nanometer prototype within the next four years.

Freescale Semiconductor, a global leader in the design and manufacture of embedded semiconductors, has introduced a series of 2Mbit magnetoresistive random access memory (MRAM) devices, providing designers a broader portfolio of MRAM products for a range of commercial, industrial and automotive applications. The 2Mbit MRAM replaces two current 1Mbit nvRAM parts with a single device designed to help reduce system cost and board area.

The 2Mbit devices round out Freescale's award-winning MRAM family of products with a choice of commercial, industrial and extended temperature ranges (operating from -40o to 105oC). MRAM devices are well-suited for a variety of applications, such as networking, security, data storage, gaming and printers. The extended temperature version is suitable for use in rugged application environments, such as military, aerospace and automotive designs.

Micromem Technologies has received very encouraging feedback regarding its financing efforts in Europe. The company has been advised by the agent they have encountered no issues with  completing the financing. In a previously announced press release, it remains the company’s intention to raise US$8,500,000. The agent reserves the right to close in tranches.

A portion of  the funds have been earmarked to engage an identified U.S. based foundry that will enable the company to accomplish its commercialization plans. The purpose of the foundry is to design  and build a commercial MRAM device utilizing Microme m’s patented technology.