May 2007

Research and Markets has announced the addition of the Frost & Sullivan report: Advances in Embedded Memories to their offering.

In this research, Frost & Sullivan's expert analysts thoroughly examine the following technologies: embedded static random access memory (eSRAM), embedded dynamic RAM (eDRAM), embedded flash memory (eflash), magnetoresistive RAM (MRAM), ferroelectric RAM (FeRAM/FRAM), phase change memory (PCM/PRAM), carbon nanotube memory, molecular memory, polymer memory, and biomolecular memory.

Fujitsu's MB85R2001 and MB85R2002 feature non-volatile memory with high-speed data writing, low power consumption and the ability to provide a large number of write cycles.

The MB85R2001 and MB85R2002 FRAM chips are ideal for automotive navigation systems, multifunction printers, measuring instruments and other advanced applications that can use non-volatile memory to store various parameters, record equipment operating conditions and preserve security information.

The configuration of MB85R2001 is 256K words x 8bits, while the configuration of MB85R2002 is 128K words x 16 bits. Both MB85R2001 and MB85R2002 feature read access times of 100ns and read/write cycle times of 150ns. The MB85R2001 and MB85R2002 operate from 3V to 3.6V.

Silicon Laude announces the availability of the world’s first multipurpose in-circuit emulator that can emulate not only Honeywell's HXNV0100 radiation hardened synchronous MRAM, but also Honeywell ASICs containing up to one million gates.

Dubbed the MRAMulator and measuring only 0.9” x 0.9” square, the in-circuit emulator is pin for pin compatible with, and has the same X/Y form-factor as, Honeywell's HXNV0100 MRAM in a 64-lead ceramic quad flat pack (QFP). The MRAMulator is multipurpose because, when not being used as an HXNV0100 emulator, it can be used as a very powerful IP development platform for implementing and testing logic designs in actual target hardware before conversion into a Honeywell radiation hardened ASIC. Among the IP available from Silicon Laude for use in the MRAMulator, and for later conversion into a Honeywell radiation hardened ASIC, is Silicon Laude's customizable MRAM8051 microcontroller Verilog RTL source code library.

Based on Actel's ProASIC3 A3P1000 FPGA and Freescale's MR2A16A 256 kword by 16-bit (35ns) MRAM, when configured as an HXNV0100 emulator, the MRAMulator is guaranteed to work in target hardware that complies with the synchronous timing specifications found in the Honeywell HXNV0100 synchronous MRAM data sheet. The MRAMulator can be used stand-alone as a temporary, development grade, HXNV0100 replacement and/or it can be used in combination with Domain Technologies BoxView debugger to create a very powerful debugging and testing platform.

When used with BoxView debugger, emulation MRAM can be examined and edited, onthe-fly, even while the target system is accessing the same memory location. Moreover, emulation MRAM can be up/downloaded from the host computer's hard drive, and its contents displayed in hex, decimal, ASCII, and floating point formats, and even plotted graphically, in real-time, effectuating an animated presentation of MRAM contents. With the optional real-time trace and timing analysis (RTTA) package installed, and by using it's  four programmable trigger words, dual event counter, and 8-level event sequencer, up to 72 channels of state and timing analysis are available for selective capture of address, data, and control lines into the RTTA's 2 ksample trace buffer. To automate the complex testing and analysis process in the lab or out on the test floor, BoxView also comprises a  very powerful scripting language that has the ability to automatically look for specific debug events and respond to them by spooling the trace buffer and/or emulation MRAM contents to the host computer's hard drive for later analysis.

The MRAMulator 100% compatible with STAPL device programming files created by Actel's Libero Gold FPGA development software, which can be downloaded for free at Actel's website. Because the device programmer is built into the MRAMulator hardware, a separate device programmer is not needed. Programming the MRAMulator's embedded FPGA is done via USB connection using the STAPL player GUI software that is shipped with each unit.

MRAMulators are available with and without the real-time trace and timing analysis (RTTA) package. Without RTTA, the single unit price is $650.00. With RTTA and BoxView debugger, the single unit price is $2,400.00. Both versions are available from stock and shipped complete with MRAMulator, USB communications adaptor, and CD containing the STAPL player software, original HXNV0100 emulator design STAPL file, and example functional MRAM8051 STAPL file with MRAM8051 Designer's Reference.

Micromem Technologies announced today that it has achieved success in tests of radiation hardness on its device components. Samples prepared by Dr. Harry Ruda at the University of Toronto were exposed to various levels of Cobalt 60 gamma radiation. This form of radiation is one of the toughest forms and even after exposure at the highest  levels of radiation the materials performed perfectly.

Samples of pHEMT (High Electron Mobility Transistor structures) GaAs were prepared to mimic the bit cell environment of the company’s Hall Sensing MRAM. The samples were then sent for exposure to Cobalt 60 gamma radiation in an industrial medical device sterilization chamber.

The samples were exposed to three different doses of radiation as follows (each dose is reported within +/- 5 kGy):
    Low level: Min. 26.371 kGy to max. 31.603 kGy
    Mid level: Min. 45.163 kGy to Max. 52.005 kGy
    High level: Min. 95.139 kGy to Max. 112.747 kGy

Researchers at the University of Toronto then tested the samples. The test concluded the device’s functioning and capabilities remained unaltered by even the highest level of radiation exposure. These initial results were taken at room temperature. The only effects of the radiation exposure that could be seen were at temperatures below -70ºC. During actual use the device would not be exposed to such extreme temperatures.

The measurements showed that the samples made highly sensitive Hall sensors and were able to function as a memory element after dosing with high levels of radiation.

The next steps have already begun which include making and testing fully integrated bit cells fabricated at the University of Toronto. The company plans to move forward with its testing by fabricating scaled samples inside a fabrication facility. These scaled prototypes will be tested for use as radiation hardened memo ry components for sale into the medical device industry, as well as aerospace, defense and pharmaceuticals.

Honeywell announced today that it has developed a new line of sophisticated electronic components designed specifically to meet the stringent reliability requirements for computers operating in technically advanced military and commercial aerospace conditions.

One of the products is HXNVO100 -The first non volatile Magnetic RAM (MRAM) to combine SOI CMOS technology with magnetic thin films. The HXNVO100 is a one-million bit MRAM for strategic space electronics applications and can be used as a replacement for plated wire memory, as the program memory function.

Product sales for the fourth quarter of fiscal 2007 increased 50% over the prior-year quarter to $4.19 million from $2.80 million. Total revenue, consisting of product sales and contract research and development revenue, increased 31% to $4.57 million for the fourth quarter of fiscal 2007 from $3.48 million in the prior-year quarter. Net income for the fourth quarter of fiscal 2007 increased 151% to $1.55 million, or $0.33 per diluted share, compared to $619,744, or $0.13 per share, for the prior-year quarter.

No news regarding MRAM...