March 2005

NVE announced that it has been notified by the U. S. Patent and Trademark Office that the patent titled "Magnetic Field Sensor with Augmented Magnetoresistive Sensing Layer" will be issued today. The patent relates to the use of an effect known as "electron spin exchange-biasing" for low-hysteresis spin dependent tunneling (SDT) and giant magnetoresistance (GMR) sensors. The patent is number 6,872,467 and is the grant of the application published by the U.S. Patent and Trademark Office under number 2004-0115478.
SDT and GMR sensors applications include magnetic disk read heads and MRAM. The invention reduces hysteresis, which can cause errors and signal loss.
"This is an important sensor innovation," said NVE Founder and Chief Technology Officer James M. Daughton, Ph.D. "It enables better linear magnetic field sensors and could have wide applications."

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Micromem Technologies is pleased to announce that it has completed its long awaited milestone of integrating its three main memory components into a one-bit prototype.
The components were assembled into a responsive device. Previously, Professor Ruda and his team of researchers demonstrated the ability to repeatedly fabricate the memory cell components. A set of prototypes have been completed, proving a method of making this device. Dr. Kuper said "This is a very exciting time for Micromem."

As a result of recent discussions with potential joint development partners, the company has decided to increase its planned 96- bit array to a 128-bit development effort. This change is a result of the change in the marketplace and the use of RFID tags requiring a denser memory. Micromem is committed to completing its development of a commercially viable MRAM device.