Recent MRAM News - Page 3

Green Mountain Semiconductor wins a grant from NASA to develop an MRAM-enhanced neuromorphic AI processor for space applications

US-based design house and services provider Green Mountain Semiconductor (GMS) has won a Phase I Small Business Innovation Research (SBIR) contract from NASA, to develop a neuromorphic AI processor for space applications using MRAM magnetic memory.

GMS's approach involves the development of an analysis tool to optimize circuit designs for reliability and radiation resistance. This advancement will enable the use of off-the-shelf technology in space applications without the need for excessive design modifications to ensure radiation resistance.

Read the full story Posted: Oct 27,2023

Everspin expands its EMxxLX xSPI STT-MRAM product family

In 2022, Everspin Technologies announced the EMxxLX xSPI serial interface series, the industry’s first xSPI serial interface persistent memory. Later in 2022 the EMxxLX devices started to ship commercially.

Everspin chip render

The EMxxLX family offered an octal interface with 400MB/s bandwidth, compatibility with the xSPI standard and 1000X faster write times compared to NOR flash. The EMxxLX devices were available with density from 8Mb to 64Mb, and Everspin now announced that it is expanding its product offering, adding a 4Mb option and also new, smaller packaging for the 4-to-16-megabit products. 

Read the full story Posted: Oct 18,2023

RAiTEK adopts Avalanche's space-grade MRAM for its satellite-based storage systems

pMTJ STT-MRAM developer Avalanche Technology announced that it is providing its Space Grade Persistent SRAM (P-SRAM) STT-MRAM products for satellite-based storage systems developed by RAiTEK. 

Avalanche Technology MRAM chips render

RAiTEK has designed in a 16Mb device from Avalanche's Gen 2 Space Grade family to monitor data stream status, and a 1Gb Gen 3 Space Grade to support large configuration images for the onboard FPGA used in the drives, as part of their growing portfolio of data storage and processing solutions for the space industry.

Read the full story Posted: Sep 12,2023

Researchers demonstrate fast BiSb p-MTJ switching, to enable fast and low-power SOT-MRAM devices

Researchers from the Tokyo Institute of Technology have successfully demonstrated fast p-MTJ switching (1 ns, compared to current switching that is >10 ns). "The researchers achieved this using the topological insulator BiSb as the SOT layer, and say the device offers a current density about 20 times smaller than typical.

The researchers say that this technology can be applied to develop p-MTJs for SOT-MRAM that will offer ultrafast operations and ultra low power consumption, while also offering higher reliability. This follows earlier work by the same group on BiSb p-MTJs.

Read the full story Posted: Sep 02,2023

NETSOL launches a stand-alone STT-MRAM product fabricated in Samsung Foundry’s 28nm FDSOI process

NETSOL released new 1Mb to 32Mb serial and 1Mb to 64Mb parallel STT-MRAM products through the Samsung Electronics Foundry.

NETSOL MRAM products are ideal for applications that need to store and retrieve data quickly and frequently due to STT-MRAM's virtually unlimited endurance and fast-write features. Ideal for code storage, data logging, backup and working memory in industrial devices/ equipment, it can replace NOR Flash, FeRAM, low-power SRAM and nvSRAM products, among others with unmatched performance and non-volatile features.

NETSOL STT-MRAM products provide fast read and write features without a delay in recording and storing data even when the system is powered off, and is cost-effective by enabling compact systems without the need for batteries or capacitors based on its non-volatile features.

Read the full story Posted: Aug 30,2023

Everspin Technologies reported its financial results for Q2 2023

Everspin Technologies its financial results for Q2 2023 - with revenues of $15.7 (up 7% compared to 2022), a net income of $3.9 million, and positive cash flow of $3.9 million (which includes a tax credit refund of $2 million). At the end of the quarter, cash and cash equivalents were $30.8 million

Everspin chip render

The company says that its product backlog into 2024 continues to be high, but the company is experiencing some headwinds from the semiconductor downturn.

Read the full story Posted: Aug 03,2023

A recent breakthrough in spintronics research could lead to faster and more efficient optically-controlled MRAM devices

Researchers from the Hebrew University of Jerusalem in Israel have made a recent discovery that could change the face of spintronics research - the most important equation used to describe magnetization dynamics, namely the Landau-Lifshitz-Gilbert (LLG) equation, also applies to the optical domain. 

Spintronics device by Professor Capua image

A spintronics device developed by Professor Capua's lab

The new discovery has relevant applications in optical magnetic recording, namely in optically-controlled MRAM technology. Manipulation of the magnetization order parameter on optical timescales is key for ultrafast spintronics, which allows for faster, energy-efficient optically-controlled MRAM technology.

Read the full story Posted: Jun 22,2023

Avalanche to supply its Gen-2 space-grade MRAM to ASP's satellite power applications

pMTJ STT-MRAM developer Avalanche Technology announced that it is providing its disruptive Space Grade Persistent SRAM (P-SRAM) products for satellite power applications developed by Advanced Space Power Equipment GmbH (ASP). 

Avalanche Technology MRAM chips render

ASP has designed in a 16Mb device from Avalanche’s Gen 2 Space Grade P-SRAM family into its next-generation Power Conditioning & Distribution Unit (PCDU) within its satellite platform product line.

Read the full story Posted: Jun 02,2023