Recent MRAM News - Page 3

In 2019, Samsung Electronics announced that it has started to mass produce its first embedded MRAM devices, made using the company's 28 nm FD-SOI process. In 2021, Samsung announced it is working to scale down to 14 nm processes.

The company now says that it has finalized the development of its 14 nm eMRAM process, and will be read to mass produce it by the end of 2024. The company says that the 14 nm process achieve a 33% area scaling compared to its 28 nm process, and it also enables a 2.6x faster read cycle time. Samsung says that its eMRAM enables the smallest size 16MB memory die.

High-performance STT-MRAM developer Numem announced that in collaboration with ASIC/SoC designer IC’ALPS it has developed an integrated circuit with RISC-V processors, 2MBytes of NuRAM and a DSP/AI Custom Datapath Accelerator.

The two companies co-developed the SoC in an advanced technology node, taking advance of the high-performance and low power consumption of Numem's memory technology. The company also details that the physical implementation of this integrated circuit was made in a secure space (isolated location, network, and servers, and encrypted exchanges) to meet with the stringent protection of sensitive data required by this program. Numem and IC’Alps intend to extend their partnership to serve new SoC projects for customers.

Everspin announced that IBM has chosen the PERSYST EMD4E001G 1Gb STT-MRAM for use in their FlashCore Module 4.

Everspin says that its EMD4E001G high-performance persistent memory ensures critical data integrity even during power loss. With a DDR4 interface, it delivers 2.7 gigabytes/second of both read and write bandwidth, coupled with instant non-volatility.

Netsol is pleased to announce a global distribution partnership with Digi-Key Electronics, a pivotal development in its effort to improve global access and delivery of its MRAM and SRAM  products.

Digi-Key Electronics is recognized for its immense inventory of electronic parts that are immediately available for shipment. This capability aligns perfectly with the demands of the fast-paced electronics industry, where Digi-Key has distinguished itself by ensuring rapid, efficient delivery services to its global customer base. 

Through this newly forged agreement, Digi-Key will leverage its extensive online presence, spanning over 180 countries, to market and distribute Netsol's memory products to customers around the globe.

pMTJ STT-MRAM developer Avalanche Technology launched two new densities of its 3rd generation space-grade parallel asynchronous x32-interface high-reliability P-SRAM (Persistent SRAM) memory devices, based on its latest STT-MRAM tech, in 2Gb and 8Gb.

In June 2023 Avalanche announced that it is providing its products for satellite power applications developed by Advanced Space Power Equipment. Earlier that year Avalanche announced that its Gen-3 Space Grade Dual QSPI solution is now available in pre-production.

Researchers from Northwestern University, led by Prof. Pedram Khalili, report the first all-antiferromagnetic tunnel junction (ATJ) devices with both electrical switching and electrical readout of the antiferromagnetic state. The researchers observed a large room-temperature tunneling magnetoresistance effect that is comparable in size to conventional ferromagnet-based tunnel junctions. 

To create the new devices, the researchers used sputtering to deposit the device films on conventional silicon wafers. The films are compatible with established semiconductor manufacturing processes. 

France-based Tiempro Secure announced that its TESIC RISC-V Secure Element was implemented in GlobalFoundries’ 22-nm platform with embedded MRAM, after a rigorous characterization process.

Tiempo Secure says it leveraged its long-standing know-how in Secure IP, to adapt its TESIC  design to the 22FDX technology process node. The TESIC platform has a secure architecture based on a RISC-V CPU core, several memory types (including ROM, RAM, Cache,  Crypto-RAM, and MRAM), random number generators, security  sensors, and secure crypto-accelerators. This provides a pre-silicon  certified IP solution on GF’s 22FDX to SoC manufacturers who require a high-end Secure  Element.

Everspin Technologies announced that it has applied for the CHIPS Incentives Program, asking for funding for an additional 200mm MRAM production line. Everspin says the new funding will help it increase its long-term R&D IP capability. 

In November 2022, Everspin asked for funding to build a new MRAM production line in Indiana.